2021-08-31
GSM3251E, 30V P-Channel MOSFETs Offers ESD Protection with Improved Performance

Good On-State Resistance
The good drain-source on-state resistance (RDS(ON)_MAX = 50mΩ @ VIN = 10V).

ESD Protection
The active clamping circuit protects the embedded MOSFET and the external load for voltages >20V in typical condition.
In addition, the input clamping diode protects the internal gate of the MOSFET and the protection circuitry to 1kV.

SOT-23 package
The package with good thermal performance is widely preferred for all commercial-industrial surface mount applications.