2021-09-01
GSM3170 is MOSFET for switching application that features Low on-resistance.

GSM3170Z/GSM3170X

Low drain-source on-resistance

(RDS(ON)_MAX = 7.5mΩ @ VIN = 10V).

 

High drain current

High continuous drain current (ID = 70A @ TA = 25°C).

 

3.3 x 3.3 mm footprint

The small footprint can minimize thermal resistance, thereby achieving higher power density on multiple Ethernet ports.