2021-09-01
GSM3170 is MOSFET for switching application that features Low on-resistance.

Low RDS(ON)
The low drain-source on-state resistance (RDS(ON)_MAX = 7.5mΩ @ VIN = 10V) .

High ID
The high continuous drain current (ID = 70A @ TA= 25℃) .

3.3 x 3.3 mm Footprint
A small footprint that minimizes the thermal resistance enabling higher power density across multiple Ethernet ports.